MOSPEC SEMICONDUCTOR
ISO 9001 / ISO 14001  
 

SCHOTTKY BARRIER DIODE


RB411D

SCHOTTKY BARRIER DIODE

APPLICATIONS
* Low Power Rectification
* For Switching Power Supply

FEATURES
* Schottky barrier diode encapsulated in a
   SOT-23 small SMD package
* Low VF (VF=0.43V Typ. at 0.5A)
* High reliability

CONSTRUCTION
* Silicon epitaxial planar reliability

CIRCUIT

External dimensions

DIM MILLMETERS
MIN MAX
A 2.67 3.05
B 0.64 1.30
C --- 0.10
D 1.20 1.60
E 1.70 2.10
F 0.89 1.05
G 0.35 0.65
H 0.30 0.54
I 2.10 2.75
J 0.55 0.64
K 0.085 0.18

MAXIMUM RATINGS

CHARACTERISTIC SYMBOL RB411D UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
VR(RMS)
20
V
Average Rectifier Forward Current
IF(AV)
0.5
A
Peak Repetitive Forward Current
(Rated VR,Square Wave,20 KHz)
IFRM
3.0
A
Operating and Storage Junction Temperature Range
Tj , Tstg
-40 to +125
oC

STATIC ELECTRICAL CHARATERISTICS

CHARACTERISTIC
SYMBOL
MIN
TYP.
MAX.
UNIT
Forward Voltage (TC = 25 oC)
( IF = 10 mA )
( IP = 500 mA )
VF
 
 


300
500

mV
Diode Capacitance
( VR =10 V , f=1.0 MHz)
CT
 
20
pF
Reverse Current
( VR = 10 V )
IR
 
 
30
uA